High breakdown voltage and low leakage current, acheived by our unique optimized buffer layer,Įxcellent two-dimensional electron gas（２DEG）properties, acheived by precise control of growth conditions, High epi-layer uniformity, achieved by precise controls of growth conditions, NTT-AT provides high-performance and high-quality GaN HEMT epitaxial wafers with: High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.ĭurable and reliable devices in harsh environments
GaN devices can achieve very high power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.ĥG-related RF devices, such as power amplifier At the device level, GaN devices (such as GaN FET) exceed limitations of the conventional Si devices. Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. Structure targeting higher mobility available. Update: New standard HEMT structure for Power application (on 6 inch Si)
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